Datasheet Details
Part number:
TP44200NM
Manufacturer:
Tagore
File Size:
1.02 MB
Description:
650v gan hemt.
650 V enhancement mode HEMT with integrated driver, RDSON: 180 mΩ, IDS: 10 A (max) / IDSpulse: 15 A (max), 5 V PW...
Datasheet Details
Part number:
TP44200NM
Manufacturer:
Tagore
File Size:
1.02 MB
Description:
650v gan hemt.
TP44200NM Description
The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuitThe monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operationsThis device makes the applications more efficient and reliable
Features
* 650 V enhancement mode HEMT with integrated driver
* RDSON: 180 mΩ
* IDS: 10 A (max) / IDSpulse: 15 A (max)
* 5 V PWM input
* UVLO protection
* Zero reverse recovery
* Low quiescent current driver
* Adjustable turn-on slew rate
TP44200NM Distributors
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