Datasheet Details
- Part number
- TP44110HB
- Manufacturer
- Tagore
- File Size
- 1.05 MB
- Datasheet
- TP44110HB-Tagore.pdf
- Description
- 650V GaN Half-Bridge
TP44110HB Description
TP44110HB TP44110HB * 650 V GaN Half-Bridge, 90 mΩ (LS) and 90 mΩ (HS) 1.0 .
The TP44110HB is a half-bridge IC consisting of two 650 V GaN HEMT power devices.
TP44110HB Features
* 650 V enhancement mode power HEMTs
* RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side)
* IDS: 19 A (max) / IDSpulse: 30 A (max)
* Adjustable turn-on/off speed
* Reverse conduction capability
* Zero reverse-recovery loss
* High switching frequency
TP44110HB Applications
* Ac-dc, dc-dc, dc-ac converters
* Totem-pole and bi-directional PFCs
* Half- and full-bridge LLC converters
* High-frequency electronic transformers
* Mobile chargers and laptop adapters
* EV chargers and power tools
* LED and motor drives
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