Datasheet Details
Part number:
TP44110HB
Manufacturer:
Tagore
File Size:
1.05 MB
Description:
650v gan half-bridge.
650 V enhancement mode power HEMTs, RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side), IDS: 19 A (max) / IDSpulse: 30 A (max)...
Datasheet Details
Part number:
TP44110HB
Manufacturer:
Tagore
File Size:
1.05 MB
Description:
650v gan half-bridge.
TP44110HB Description
The TP44110HB is a half-bridge IC consisting of two 650 V GaN HEMT power devicesThe low-side (LS) and the high-side (HS) devices are of 90 mΩ eachThis co-packaged solution minimizes inductance in the power loop enabling clean switching even at high-current high-frequency operationsAs provided
Features
* 650 V enhancement mode power HEMTs
* RDSON: 90 mΩ (Low-side) and 90 mΩ (High-side)
* IDS: 19 A (max) / IDSpulse: 30 A (max)
* Adjustable turn-on/off speed
* Reverse conduction capability
* Zero reverse-recovery loss
* High switching frequency
TP44110HB Distributors
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