TP44100NM Datasheet (Tagore)

TP44100NM Description

The TP44100NM is a 90mΩ, 650V GaN HEMT device with integrated driver circuitThe monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operationsThis device makes the applications more efficient/reliable, and a

Features

* 650V enhancement mode HEMT with integrated driver

* 90mΩ RDSON

* 5V PWM input

* UVLO protection

* Zero reverse recovery

* Low quiescent current driver

* Adjustable turn-on slew rate

* Dv/Dt immunity both with/without driver-supply

TP44100NM Datasheet - Tagore

TP44100NM, 650V GaN HEMT