TP2510 Datasheet (Supertex Inc) - P-Channel Enhancement-Mode Vertical DMOS FETs

TP2510 Description

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing processThis combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positiv

Features

* Low threshold (-2.4V max.)

* High input impedance

* Low input capacitance (125pF max.)

* Fast switching speeds

* Low on-resistance

* Free from secondary breakdown

* Low input and output leakage Applications

* Logic level interfaces -

TP2510 Datasheet - Supertex Inc

TP2510, P-Channel Enhancement-Mode Vertical DMOS FETs