TP2635 Datasheet (Supertex Inc) - P-Channel Enhancement-Mode Vertical DMOS FETs

TP2635 Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing processThis combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive t

Features

* Low threshold (-2.0V max.)

* High input impedance

* Low input capacitance

* Fast switching speeds

* Low on-resistance

* Free from secondary breakdown

* Low input and output leakage Applications

* Logic level interfaces - ideal

TP2635 Datasheet - Supertex Inc

TP2635, P-Channel Enhancement-Mode Vertical DMOS FETs