STS65R580SS2, STS65R580DS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

The STS65R580SS2 by Silan Microelectronics is a 650V SUPER JUNCTION MOS POWER TRANSISTOR. Below is the official datasheet preview.

Datasheet Details

Part number	STS65R580SS2, STS65R580DS2
Manufacturer	Silan Microelectronics
File Size	440.32 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	STS65R580DS2-SilanMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: STS65R580SS2, STS65R580DS2. Please refer to the document for exact specifications by model.
Additional preview pages of the STS65R580SS2 datasheet.

STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

8A, 650V, RDS(on)(typ. )=0.52@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1 3 TO-263-2L 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L 1 3 TO-252-2L 12 3 TO-220F-3L KEY.

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Published: Mar 18, 2025 |