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STS65R190DS2, STS65R190FS2 650V SUPER JUNCTION MOS POWER TRANSISTOR

STS65R190DS2 Description

Silan Microelectronics STS65R190F(L8A)(T)(S)(D)S2_Datasheet 20A, 650V SUPER JUNCTION MOS POWER TRANSISTOR .
2 STS65R190F(L8A)(T)(S)(D)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

STS65R190DS2 Features

* 20A, 650V, RDS(on)(typ. )=0.155@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant 123 TO-22

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: STS65R190DS2, STS65R190FS2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
STS65R190DS2, STS65R190FS2
Manufacturer
Silan Microelectronics
File Size
642.55 KB
Datasheet
STS65R190FS2-SilanMicroelectronics.pdf
Description
650V SUPER JUNCTION MOS POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: STS65R190DS2, STS65R190FS2.
Please refer to the document for exact specifications by model.

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650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
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