STS65R360DS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

The STS65R360DS2 by Silan Microelectronics is a 650V SUPER JUNCTION MOS POWER TRANSISTOR. Below is the official datasheet preview.

Datasheet Details

Part number	STS65R360DS2
Manufacturer	Silan Microelectronics
File Size	555.03 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	STS65R360DS2-SilanMicroelectronics.pdf
Additional preview pages of the STS65R360DS2 datasheet.

STS65R360D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

12A, 650V, RDS(on)(typ. )=0.3Ω@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L 1 3 TO-263-2L 12 3 TO-220F-3L KEY.

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Published: Mar 17, 2025 |