Datasheet Specifications
- Part number
- HFP630
- Manufacturer
- SemiHow
- File Size
- 179.69 KB
- Datasheet
- HFP630-SemiHow.pdf
- Description
- 200V N-Channel MOSFET
Description
HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.34 ȍ (Typ. ) @VGS=10V 100% Avalanche TestHFP630 Distributors
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