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HFP630 - 200V N-Channel MOSFET

HFP630 Description

HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A .

HFP630 Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.34 ȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Test

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Datasheet Details

Part number
HFP630
Manufacturer
SemiHow
File Size
179.69 KB
Datasheet
HFP630-SemiHow.pdf
Description
200V N-Channel MOSFET

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200V N-Channel MOSFET SemiHow
SemiHow HFP630-like datasheet