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HFP640G N-Channel MOSFET

HFP640G Description

HFP640G Feb 2015 HFP640G 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18 A .

HFP640G Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 29 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Test

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Datasheet Details

Part number
HFP640G
Manufacturer
SemiHow
File Size
181.06 KB
Datasheet
HFP640G-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
SemiHow HFP640G-like datasheet