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HFP640 200V N-Channel MOSFET

HFP640 Description

HFP640 July 2005 HFP640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A .

HFP640 Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 37 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.145 ȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tes

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Datasheet Details

Part number
HFP640
Manufacturer
SemiHow
File Size
190.60 KB
Datasheet
HFP640-SemiHow.pdf
Description
200V N-Channel MOSFET

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200V N-Channel MOSFET SemiHow
SemiHow HFP640-like datasheet