Datasheet Specifications
- Part number
- HFP640
- Manufacturer
- SemiHow
- File Size
- 190.60 KB
- Datasheet
- HFP640-SemiHow.pdf
- Description
- 200V N-Channel MOSFET
Description
HFP640 July 2005 HFP640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.145 ȍ (Typ. ) @VGS=10V 100% Avalanche TesHFP640 Distributors
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