2SD1710 - NPN Triple Diffused Planar Silicon Transistor

Sanyo

Datasheet Details

Part number	2SD1710
Manufacturer	Sanyo
File Size	37.65 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SD1710-Sanyo.pdf

High speed(tf=500ns max).
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process. Package Dimensions unit : mm 2039D 3.4 16.0 [2SD1710] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 3.5 20.4 2.8 2.0 2.0 1.0 0.6 Specifications Absolute Maximum Ratings at Ta=25°C 123 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Vo.

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Published: Aug 23, 2017 |