2SK2911 - N-Channel Silicon MOSFET

Sanyo Semicon Device

Datasheet Details

Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive. Package Dimensions unit:mm 2091A [2SK2911] 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source.

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Published: Mar 30, 2005 |