2SK2916 - Silicon N Channel MOS Type Field Effect Transistor

Toshiba

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2SK2916 silicon n channel mos type field effect transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK2916
Manufacturer	Toshiba
File Size	408.32 KB
Description	Silicon N Channel MOS Type Field Effect Transistor
Datasheet	2SK2916 Datasheet

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Other Datasheets by Toshiba

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2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSV) 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.