2SK2915 - N-Channel MOSFET

Toshiba

Datasheet Details

Part number	2SK2915
Manufacturer	Toshiba
File Size	780.84 KB
Description	N-Channel MOSFET
Datasheet	2SK2915 Datasheet

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2SK2915 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2915 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.31 Ω (typ.) : |Yfs| = 15 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 16 64 150 1026 16 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3.