2SK2912S - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2912S
Manufacturer	Hitachi Semiconductor
File Size	53.43 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2912S_HitachiSemiconductor.pdf

Low on-resistance R DS = 15 mΩ typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature No.

📁 2SK2912S Similar Datasheet

2SK2911 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
2SK2914 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2915 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2916 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2917 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2918-01 - Power MOSFET (Fuji Electric)
2SK2919 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
2SK2900-01 - N-channel MOS-FET (Fuji Electric)

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |