2SK2912L - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2912L
Manufacturer	Hitachi Semiconductor
File Size	53.43 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2912L_HitachiSemiconductor.pdf

Low on-resistance R DS = 15 mΩ typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature No.

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Published: Mar 30, 2005 |