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2SC5070 - NPN TRANSISTOR

Sanyo Semicon Device

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Datasheet Details

Part number	2SC5070
Manufacturer	Sanyo Semicon Device
File Size	104.34 KB
Description	NPN TRANSISTOR
Datasheet	2SC5070_SanyoSemiconDevice.pdf

2SC5070 Product details

Features

High current capacity.
Adoption of MBIT process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO. Package Dimensions unit:mm 2084A [2SC5070] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperat.

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Published: Apr 3, 2005 |