2SC3089 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3089
Manufacturer	Sanyo Semicon Device
File Size	94.18 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3089_SanyoSemiconDevice.pdf

High breakdown voltage (VCBO≥800V).
Fast switching speed.
Wide ASO. Package Dimensions unit:mm 2022A [2SC3089] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 8.

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Published: Mar 22, 2005 |