2SC3083 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3083
Manufacturer	Sanyo Semicon Device
File Size	96.21 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3083_SanyoSemiconDevice.pdf

High breakdown voltage (VCBO≥500V).
Fast switching speed.
Wide ASO. Package Dimensions unit:mm 2022A [2SC3083] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 5.

📁 2SC3083 Similar Datasheet

2SC3082K - NPN Silicon Transistor (ROHM)
2SC3085 - Silicon NPN Power Transistor (Inchange Semiconductor)
2SC3001 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3006 - Silicon NPN epitaxial planer type Transistor (Toshiba Semiconductor)
2SC3007 - Silicon NPN Transistor (Toshiba)
2SC3011 - Silicon NPN epitaxial planer Transistor (Toshiba Semiconductor)
2SC3012 - NPN Transistor (INCHANGE)
2SC3017 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |