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2SB1122 - PNP Transistor

Sanyo Semicon Device

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Datasheet Details

Part number	2SB1122
Manufacturer	Sanyo Semicon Device
File Size	135.80 KB
Description	PNP Transistor
Datasheet	2SB1122_SanyoSemiconDevice.pdf

2SB1122 Product details

Features

Adoption of FBET process.
Very small size making it easy to provide high- density hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1122/2SD1622] E : Emitter C : Collector B : Base ( ) : 2SB1122 Specifications SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO.

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Other Datasheets by Sanyo Semicon Device

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Published: Mar 22, 2005 |