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2SB1120 - PNP Transistor

Sanyo Semicon Device

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Datasheet Details

Part number	2SB1120
Manufacturer	Sanyo Semicon Device
File Size	77.24 KB
Description	PNP Transistor
Datasheet	2SB1120_SanyoSemiconDevice.pdf

2SB1120 Product details

Features

Low collector-to-emitter saturation voltage : VCE(sat)max=.
0.45V.
Large current capacity : IC=.
2.5A, ICP=.
5A.
Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1120] E : Emitter C : Collector B : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse).

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Other Datasheets by Sanyo Semicon Device

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Published: Mar 22, 2005 |