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2SB1100 - Silicon PNP Power Transistors

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Datasheet Details

Part number 2SB1100
Manufacturer Inchange Semiconductor
File Size 218.34 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet 2SB1100-InchangeSemiconductor.pdf

2SB1100 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE= 1000(Min)@ IC= -10A Complement to Type 2SD1591 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100

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