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2SB1152 - Silicon PNP Power Transistors

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Datasheet Details

Part number 2SB1152
Manufacturer Inchange Semiconductor
File Size 218.89 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet 2SB1152-InchangeSemiconductor.pdf

2SB1152 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICP Co

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