2SA1689 - PNP Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA1689
Manufacturer	Sanyo Semicon Device
File Size	29.40 KB
Description	PNP Epitaxial Planar Silicon Transistors
Datasheet	2SA1689_SanyoSemiconDevice.pdf

High breakdown voltage.
Small reverse transfer capacitance and excellent high frequency characteristic.
Excellent DC current gain.
Adoption of FBET process. Package Dimensions unit:mm 2003B [2SA1689] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Tempe.

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Published: Mar 22, 2005 |