2SA1683 - PNP Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SA1683
Manufacturer	Sanyo Semicon Device
File Size	40.01 KB
Description	PNP Epitaxial Planar Silicon Transistors
Datasheet	2SA1683_SanyoSemiconDevice.pdf

Adoption of FBET process.
High breakdown voltage : VCEO>80V. Package Dimensions unit:mm 2033A [2SA1683/2SC4414] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1683 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Elect.

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Published: Mar 22, 2005 |