2SA1682 - PNP Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SA1682
Manufacturer	Sanyo Semicon Device
File Size	40.37 KB
Description	PNP Epitaxial Planar Silicon Transistor
Datasheet	2SA1682_SanyoSemiconDevice.pdf

High breakdown voltage (VCEO≥300V).
Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).
Excellent DC current gain ratio (hFE ratio : 1.0 typ).
Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

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Published: Mar 22, 2005 |