K4T51043QG 512Mb G-die DDR2 SDRAM

Samsung

Description

CSD18501Q5A www.ti.com SLPS319A * JUNE 2012 * REVISED JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18501Q5A 1 .
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

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Datasheet Specifications

Part number: K4T51043QG
Manufacturer: Samsung
File Size: 0.96 MB
Datasheet: K4T51043QG-Samsung.pdf
Description: 512Mb G-die DDR2 SDRAM

Features

* Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate

Applications

* DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control Device CSD18501Q5A Package SON 5-mm × 6-mm Plastic Package Media 13-Inch Reel Qty 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS VGS Drain to Source

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📁 Related Datasheet

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K4T51043QG 512Mb G-die DDR2 SDRAM Samsung

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