K4T51083QG, K4T51043QG 512Mb G-die DDR2 SDRAM

Samsung

Description

CSD18502KCS www.ti.com SLPS367A * AUGUST 2012 * REVISED OCTOBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD1850.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

📥 Download Datasheet

K4T51083QG Datasheet Preview — This datasheet PDF includes multiple part numbers: K4T51083QG, K4T51043QG. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: K4T51083QG, K4T51043QG
Manufacturer: Samsung
File Size: 0.96 MB
Datasheet: K4T51043QG-Samsung.pdf
Description: 512Mb G-die DDR2 SDRAM
Note: This datasheet PDF includes multiple part numbers: K4T51083QG, K4T51043QG.
Please refer to the document for exact specifications by model.

Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist

Applications

* DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control ABSOLUTE MAXIMUM RATINGS TA = 25°C VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C

K4T51083QG Distributors

📁 Related Datasheet

K4T51083QB-GCD5 K4T51083QB-ZCD5 K4T51083QE K4T51043QB-GCD5 K4T51043QB-ZCD5 K4T51043QE

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K4T51043QG 512Mb G-die DDR2 SDRAM Samsung

Samsung K4T51083QG-like datasheet