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K4T51163QB-ZCD5 - 512Mb B-die DDR2 SDRAM

Download the K4T51163QB-ZCD5 datasheet PDF. This datasheet also covers the K4T51083QB variant, as both devices belong to the same 512mb b-die ddr2 sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

3.

4.

Rev.

Key Features

  • Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin.
  • 4 Banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Read Latency(RL) -1.
  • Burst Length: 4 , 8(Interleav.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4T51083QB_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
512Mb B-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.5 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.