K4D551638H - 256Mbit GDDR SDRAM

Product Overview

Samsung

Datasheet Details

Part number	K4D551638H
Manufacturer	Samsung
File Size	235.41 KB
Description	256Mbit GDDR SDRAM
Datasheet	K4D551638H Datasheet
Additional preview pages of the K4D551638H datasheet.

Product details

Description

FOR 4M x 16Bit x 4 Bank GDDR SDRAM The K4D551638H is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.Synchronous

Features

2.35V ~ 2.7V power supply for device operation.
2.35V ~ 2.7V power supply for I/O interface.
SSTL_2 compatible inputs/outputs.
4 banks operation.
MRS cycle with address key programs -. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
All inputs except data & DM are sampled at the positive going edge of the system clock.
Differential clock input.
No Write-Interrupted by Read F.

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Published: Sep 1, 2016 |