K7N403601M, K7N401801M - (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM

Samsung semiconductor

The K7N403601M by Samsung semiconductor is a (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM. Below is the official datasheet preview.

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K7N403601M (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K7N403601M** (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K7N403601M, K7N401801M
Manufacturer	Samsung semiconductor
File Size	311.55 KB
Description	(K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
Datasheet	K7N401801M_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K7N403601M, K7N401801M. Please refer to the document for exact specifications by model.
Additional preview pages of the K7N403601M datasheet.

K7N403601M Product details

Description

The K7N403601M and K7N401801M are 4,718,592 bits Synchronous Static SRAMs.

Features

3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
Α interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.

📁 K7N403601M Similar Datasheet

Other Datasheets by Samsung semiconductor

K7N403601A - (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N403601B - (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N403609B - (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM
K7N401801A - (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N401801B - (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N401801M - (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM

Published: Jan 25, 2009 |