K7N403601A, K7N401801A - (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM

Samsung semiconductor

The K7N403601A by Samsung semiconductor is a (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM. Below is the official datasheet preview.

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K7N403601A (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K7N403601A** (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K7N403601A, K7N401801A
Manufacturer	Samsung semiconductor
File Size	308.70 KB
Description	(K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
Datasheet	K7N401801A_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K7N403601A, K7N401801A. Please refer to the document for exact specifications by model.
Additional preview pages of the K7N403601A datasheet.

K7N403601A Product details

Description

The K7N403601A and K7N401801A are 4,718,592 bits Synchronous Static SRAMs.

Features

VDD=3.3V+0.165V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no datacontention.
Α interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down.

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Other Datasheets by Samsung semiconductor

K7N403601B - (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N403601M - (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
K7N403609B - (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM
K7N401801A - (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N401801B - (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N401801M - (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM

Published: Jan 25, 2009 |