K7N401801A - (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM

Samsung semiconductor

The K7N401801A by Samsung semiconductor is a (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM. Below is the official datasheet preview.

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K7N401801A (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K7N401801A** (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K7N401801A
Manufacturer	Samsung semiconductor
File Size	308.70 KB
Description	(K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
Datasheet	K7N401801A_Samsungsemiconductor.pdf
Additional preview pages of the K7N401801A datasheet.

K7N401801A Product details

Description

The K7N403601A and K7N401801A are 4,718,592 bits Synchronous Static SRAMs.

Features

VDD=3.3V+0.165V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no datacontention.
Α interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down.

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Other Datasheets by Samsung semiconductor

K7N401801B - (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N401801M - (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
K7N401809B - (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM
K7N403601A - (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N403601B - (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N403601M - (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM

Published: Jan 25, 2009 |