K7N401801M - (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM

Samsung semiconductor

The K7N401801M by Samsung semiconductor is a (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM. Below is the official datasheet preview.

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K7N401801M (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K7N401801M** (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K7N401801M
Manufacturer	Samsung semiconductor
File Size	311.55 KB
Description	(K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
Datasheet	K7N401801M_Samsungsemiconductor.pdf
Additional preview pages of the K7N401801M datasheet.

K7N401801M Product details

Description

The K7N403601M and K7N401801M are 4,718,592 bits Synchronous Static SRAMs.

Features

3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
Α interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.

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Other Datasheets by Samsung semiconductor

K7N401801A - (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N401801B - (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N401809B - (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM
K7N403601A - (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N403601B - (K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
K7N403601M - (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM

Published: Jan 25, 2009 |