K7J323682M, K7J321882M - (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM

Samsung semiconductor

The K7J323682M by Samsung semiconductor is a (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM. Below is the official datasheet preview.

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K7J323682M (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K7J323682M** (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K7J323682M, K7J321882M
Manufacturer	Samsung semiconductor
File Size	350.97 KB
Description	(K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM
Datasheet	K7J321882M_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K7J323682M, K7J321882M. Please refer to the document for exact specifications by model.
Additional preview pages of the K7J323682M datasheet.

K7J323682M Product details

Description

on page 2 and add HSTL I/O comment 6.

Features

1.8V+0.1V/-0.1V Power Supply.
DLL circuitry for wide output data valid window and future freguency scaling.
I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O.
Separate independent read and write data ports.
HSTL I/O.
Synchronous pipeline read with self timed late write.
Registered address, control and data input/output.
Full data coherency, providing most current data.
DDR(Double.

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Published: Feb 23, 2009 |