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K7J161882B - (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM

The K7J161882B by Samsung semiconductor is a (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM. Below is the official datasheet preview.

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Official preview page of the K7J161882B (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number K7J161882B
Manufacturer Samsung semiconductor
File Size 418.32 KB
Description (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
Datasheet download datasheet K7J161882B_Samsungsemiconductor.pdf
Additional preview pages of the K7J161882B datasheet.

K7J161882B Product details

Description

Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Address Inputs Data Inputs 1 NOTE Q0-35 Data Outputs Read, Write Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Test Clock JTAG Test Data Output No

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