Description
The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Features
- JEDEC standard 3.3V power supply.
- LVTTL compatible with multiplexed address.
- Four banks operation.
- MRS cycle with address key programs
-. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- DQM (x8) & L(U)DQM (x16) for masking.
- Auto & self refresh.
- 64ms refr.
K4S641632K_Samsungsemiconductor.pdf
