K4S641632H-L60, K4S Datasheet - Samsung semiconductor

K4S641632H-L60 64Mb H-die SDRAM Specification

SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 0.0 (May, 2003) Target spec release CMOS SDRAM Revision 0.1 (July, 2003) Preliminary spec release Revision 0.2 (August, 2003) Modified IBIS characteristic. Revision 1.0 (September, 20.

K4S641632H-L60 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S-64163.pdf

K4S641632H-L60 Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S641632H-L60, K4S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4S641632H-L60, K4S

Manufacturer:

Samsung semiconductor

File Size:

144.25 KB

Description:

64mb h-die sdram specification.

Note:

This datasheet PDF includes multiple part numbers: K4S641632H-L60, K4S.
Please refer to the document for exact specifications by model.

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