K4S641632D 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

Description

K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 June 2000 * Samsung Electronics reserves the right.
The K4S641632D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high p.

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Datasheet Specifications

Part number: K4S641632D
Manufacturer: Samsung semiconductor
File Size: 115.07 KB
Datasheet: K4S641632D_Samsungsemiconductor.pdf
Description: 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

Applications

* ORDERING INFORMATION Part No. K4S641632D-TC/L55 K4S641632D-TC/L60 K4S641632D-TC/L70 K4S641632D-TC/L75 K4S641632D-TC/L80 K4S641632D-TC/L1H K4S641632D-TC/L1L Max Freq. 183MHz(CL=3) 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100

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📁 Related Datasheet

K4S641632H K4S641632N K4S640832N K4S643232H-TC-L50 K4S643232H-TC-L55 K4S643232H-TC-L60

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K4S641632D 64Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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