Download the K4S641632H-L60 datasheet PDF.
This datasheet also covers the K4S variant, as both devices belong to the same 64mb h-die sdram specification family and are provided as variant models within a single manufacturer datasheet.
General Description
Rev.
Key Features
JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Full PDF Text Transcription for K4S641632H-L60 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K4S641632H-L60. For precise diagrams, and layout, please refer to the original PDF.
SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to change products or specifi...
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* Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 0.0 (May, 2003) • Target spec release CMOS SDRAM Revision 0.1 (July, 2003) • Preliminary spec release Revision 0.2 (August, 2003) • Modified IBIS characteristic. Revision 1.0 (September, 2003) • Finalized Revision 1.1 (September, 2003) • Corrected IBIS Specification. Revision 1.2 (October, 2003) • Deleted speed 7C at x4/x8. Revision 1.3 (October, 2003) • Deleted AC parameter notes 5. Revision 1.4 (November, 2003) • Modified Pin Function description. Rev
K4S641632H-L60 Datasheet
