Description
The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with
Features
- VDD/VDDQ = 2.5V/2.5V.
- LVCMOS compatible with multiplexed address.
- Four banks operation.
- MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
- EMRS cycle with address key programs.
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- Special Function Support. -. PASR (Par.
