K4S56163LC-RF - 16Mx16 Mobile SDRAM 54CSP

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S56163LC-RF
Manufacturer	Samsung semiconductor
File Size	60.47 KB
Description	16Mx16 Mobile SDRAM 54CSP
Datasheet	K4S56163LC-RF Datasheet
Additional preview pages of the K4S56163LC-RF datasheet.

Product details

Description

The K4S56163LC is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Part.

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Other Datasheets by Samsung semiconductor

K4S56163LC - 16Mx16 Mobile SDRAM 54CSP
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K4S56163LF-XG - 4M x 16Bit x 4 Banks Mobile SDRAM
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Published: Apr 7, 2005 |