K4S281633D-N1H - 8Mx16 SDRAM 54CSP

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S281633D-N1H
Manufacturer	Samsung semiconductor
File Size	71.00 KB
Description	8Mx16 SDRAM 54CSP
Datasheet	K4S281633D-N1H Datasheet
Additional preview pages of the K4S281633D-N1H datasheet.

Product details

Description

The K4S281633D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto refresh.
64ms refresh period (4K cycle.

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Published: Apr 7, 2005 |