K4S281632B - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

Datasheet Details

Part number	K4S281632B
Manufacturer	Samsung semiconductor
File Size	108.47 KB
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S281632B_Samsungsemiconductor.pdf

The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM.

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Published: Apr 7, 2005 |