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STS2321 P-Channel Enhancement Mode Field Effect Transistor

STS2321 Description

SamHop Microelectronics Corp.STS2321 Oct .29 2004 V1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -20V .

STS2321 Features

* ( m W ) Max ID -3.2A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = -4.5V 90 @ VGS =-2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Cont

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Datasheet Details

Part number
STS2321
Manufacturer
SamHop Microelectronics
File Size
555.13 KB
Datasheet
STS2321-SamHopMicroelectronics.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
SamHop Microelectronics STS2321-like datasheet