SPN8848 Datasheet (SYNC POWER) - Dual N-Channel Enhancement Mode MOSFET

SPN8848, Dual N-Channel Enhancement Mode MOSFET

The SPN8848 is the Dual N-Channel Enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly s

SPN8848 Features

* 40V/10A, RDS(ON )= 8.5mΩ@VGS=10V

* 40V/8.0A, RDS(ON)=12mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6-8L) PART MARKING 2024/01/09 Ver0