SPN8822 Datasheet (SYNC POWER) - Dual N-Channel MOSFET

SPN8822, Dual N-Channel MOSFET

The SPN8822 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

SPN8822 Features

* 20V/8.0A,RDS(ON)=24mΩ@VGS=4.5V

* 20V/7.0A,RDS(ON)=32mΩ@VGS=2.5V

* 20V/3.0A,RDS(ON)=42mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TSSOP

* 8 package design PIN CONFIGURATION(TSS