SPN8810 Datasheet (SYNC POWER)

SPN8810, N-Channel MOSFET

The SPN8810 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , note

SPN8810 Features

* 100V/74A,RDS(ON)=8.0mΩ@VGS=10V

* 100V/74A,RDS(ON)=10.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6-8L) 2023/07/13 Ver 4 PART MARKING