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SPN8830 - N-Channel Enhancement Mode MOSFET

Description

The SPN8830 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • PIN.

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Datasheet Details

Part number SPN8830
Manufacturer SYNC POWER
File Size 375.10 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN8830 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN8830 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8830 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8830 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES PIN CONFIGURATION(PPAK5x6-8L)  30V/100A,RDS(ON)=1.3mΩ@VGS=10V  30V/100A,RDS(ON)=2.0mΩ@VGS=4.
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